Add to like
Add to project list
Inventory:25000
  • Qty Unit Price price
  • 1 $0.319 $0.319
  • 10 $0.315 $3.15
  • 100 $0.311 $31.1
  • 1000 $0.307 $307
  • 10000 $0.3038 $3038

Not the price you want? Send RFQ Now and we'll contact you ASAP

  • Manufacturer No:
    FDS4435BZ
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    FDS4435BZ
  • SKU:
    4131205
  • Description:
    ON SEMICONDUCTOR - FDS4435BZ - P CHANNEL MOSFET, -30V, 8.8A, SOIC

FDS4435BZ Details

ON SEMICONDUCTOR - FDS4435BZ - P CHANNEL MOSFET, -30V, 8.8A, SOIC

FDS4435BZ Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Pins: 8
  • Terminal Position: DUAL
  • REACH SVHC: No SVHC
  • Gate to Source Voltage (Vgs): 25V
  • Transistor Element Material: SILICON
  • Element Configuration: Single
  • Drain to Source Voltage (Vdss): 30V
  • Operating Temperature: -55°C~150°C TJ
  • Height: 1.75mm
  • Transistor Application: SWITCHING
  • Lifecycle Status: ACTIVE (Last Updated: 1 day ago)
  • Subcategory: Other Transistors
  • Power Dissipation: 2.5W
  • FET Type: P-Channel
  • Rise Time: 13 ns
  • Drain to Source Breakdown Voltage: -30V
  • Series: PowerTrench?
  • Fall Time (Typ): 38 ns
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A Ta
  • Continuous Drain Current (ID): -8.8A
  • Rds On (Max) @ Id, Vgs: 20m Ω @ 8.8A, 10V
  • Feedback Cap-Max (Crss): 345 pF
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Terminations: 8
  • Terminal Form: GULL WING
  • Max Junction Temperature (Tj): 150°C
  • Published: 2009
  • Factory Lead Time: 18 Weeks
  • Length: 5mm
  • Width: 4mm
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Resistance: 20mOhm
  • Turn On Delay Time: 10 ns
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Turn-Off Delay Time: 30 ns
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Voltage - Rated DC: -30V
  • Vgs (Max): ±25V
  • Power Dissipation-Max: 2.5W Ta
  • Weight: 130mg
  • Current Rating: -8.8A
  • Threshold Voltage: -2.1V
  • Input Capacitance (Ciss) (Max) @ Vds: 1845pF @ 15V
  • Nominal Vgs: -2.1 V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

Excellent

Based on reviews

Excellent

Based on reviews

LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.
Our social media
We support logistics
We Accept Payment Via