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  • Manufacturer No:
    FDV303N
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    FDV303N
  • SKU:
    4131630
  • Description:
    MOSFET N-CH 25V 680MA SOT-23

FDV303N Details

MOSFET N-CH 25V 680MA SOT-23

FDV303N Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Terminal Position: DUAL
  • Number of Pins: 3
  • Terminal Form: GULL WING
  • REACH SVHC: No SVHC
  • Time@Peak Reflow Temperature-Max (s): 30
  • Voltage - Rated DC: 25V
  • Dual Supply Voltage: 25V
  • Element Configuration: Single
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Current: 12A
  • Operating Mode: ENHANCEMENT MODE
  • Gate to Source Voltage (Vgs): 8V
  • Subcategory: FET General Purpose Power
  • Width: 3.05mm
  • Power Dissipation: 350mW
  • Fall Time (Typ): 8.5 ns
  • Turn-Off Delay Time: 17 ns
  • Continuous Drain Current (ID): 680mA
  • Resistance: 450mOhm
  • Lifecycle Status: ACTIVE (Last Updated: 16 hours ago)
  • Nominal Vgs: 800 mV
  • Drive Voltage (Max Rds On,Min Rds On): 2.7V 4.5V
  • Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
  • Current - Continuous Drain (Id) @ 25°C: 680mA Ta
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Terminations: 3
  • Factory Lead Time: 10 Weeks
  • Termination: SMD/SMT
  • Peak Reflow Temperature (Cel): 260
  • Max Junction Temperature (Tj): 150°C
  • Drain to Source Breakdown Voltage: 25V
  • Transistor Element Material: SILICON
  • Voltage: 20V
  • FET Type: N-Channel
  • Published: 1997
  • Transistor Application: SWITCHING
  • Terminal Finish: TIN
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Length: 2.92mm
  • Threshold Voltage: 800mV
  • Turn On Delay Time: 3 ns
  • Rise Time: 8.5 ns
  • Current Rating: 680mA
  • Vgs (Max): ±8V
  • Vgs(th) (Max) @ Id: 1.5V @ 250μA
  • Height: 1.11mm
  • Power Dissipation-Max: 350mW Ta
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Rds On (Max) @ Id, Vgs: 450m Ω @ 500mA, 4.5V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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