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  • Manufacturer No:
    FDC6333C
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    Get the PDF file
  • SKU:
    4133862
  • Description:
    ON SEMICONDUCTOR - FDC6333C - Dual MOSFET, N and P Channel, 2.5 A, 30 V, 0.095 ohm, 10 V, 1.8 V
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  • 1 $0.225 $0.225
  • 10 $0.222 $2.22
  • 100 $0.219 $21.9
  • 1000 $0.216 $216
  • 10000 $0.2136 $2136

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  • Manufacturer No:
    FDC6333C
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    FDC6333C
  • SKU:
    4133862
  • Description:
    ON SEMICONDUCTOR - FDC6333C - Dual MOSFET, N and P Channel, 2.5 A, 30 V, 0.095 ohm, 10 V, 1.8 V

FDC6333C Details

ON SEMICONDUCTOR - FDC6333C - Dual MOSFET, N and P Channel, 2.5 A, 30 V, 0.095 ohm, 10 V, 1.8 V

FDC6333C Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Channels: 2
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Factory Lead Time: 10 Weeks
  • Number of Pins: 6
  • REACH SVHC: No SVHC
  • Element Configuration: Dual
  • Gate to Source Voltage (Vgs): 25V
  • Height: 1mm
  • Length: 3mm
  • Operating Temperature: -55°C~150°C TJ
  • Transistor Application: SWITCHING
  • Continuous Drain Current (ID): 2.5A
  • Subcategory: Other Transistors
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Fall Time (Typ): 13 ns
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Power - Max: 700mW
  • Turn On Delay Time: 4.5 ns
  • Series: PowerTrench?
  • Max Power Dissipation: 960mW
  • Resistance: 95mOhm
  • Nominal Vgs: 1.8 V
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A 2A
  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Terminations: 6
  • Terminal Form: GULL WING
  • Max Junction Temperature (Tj): 150°C
  • Threshold Voltage: 1.8V
  • Transistor Element Material: SILICON
  • Drain to Source Voltage (Vdss): 30V
  • Published: 2017
  • Lifecycle Status: ACTIVE (Last Updated: 2 days ago)
  • Current Rating: 2.5A
  • Operating Mode: ENHANCEMENT MODE
  • Width: 1.7mm
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Rise Time: 13 ns
  • Turn-Off Delay Time: 11 ns
  • FET Feature: Logic Level Gate
  • Drain to Source Breakdown Voltage: -30V
  • FET Type: N and P-Channel
  • Power Dissipation: 960mW
  • Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
  • Weight: 36mg
  • Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
  • Rds On (Max) @ Id, Vgs: 95m Ω @ 2.5A, 10V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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