Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:12
- Qty Unit Price price
- 1 $1.393 $1.393
- 10 $1.379 $13.79
- 100 $1.365 $136.5
- 1000 $1.351 $1351
- 10000 $1.3376 $13376
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：FQB12P20TM
- Manufacturer：ON Semiconductor
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：FQB12P20TM
- SKU：4134309
- Description：ON SEMICONDUCTOR - FQB12P20TM - P CHANNEL MOSFET, -200V, -11.5A, D2PAK
User Guide
User Guide
FQB12P20TM Details
ON SEMICONDUCTOR - FQB12P20TM - P CHANNEL MOSFET, -200V, -11.5A, D2PAK
FQB12P20TM Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 3
- REACH SVHC: No SVHC
- Factory Lead Time: 7 Weeks
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 30V
- Published: 2000
- Height: 4.83mm
- Operating Mode: ENHANCEMENT MODE
- Subcategory: Other Transistors
- Case Connection: DRAIN
- Turn On Delay Time: 20 ns
- Vgs (Max): ±30V
- Fall Time (Typ): 60 ns
- Width: 9.65mm
- Vgs(th) (Max) @ Id: 5V @ 250μA
- Resistance: 470mOhm
- Continuous Drain Current (ID): 11.5mA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Drain to Source Breakdown Voltage: -200V
- Weight: 1.31247g
- Rise Time: 195 ns
- Current - Continuous Drain (Id) @ 25°C: 11.5A Tc
- Power Dissipation-Max: 3.13W Ta 120W Tc
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Terminal Form: GULL WING
- Drain to Source Voltage (Vdss): 200V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Threshold Voltage: -5V
- JESD-30 Code: R-PSSO-G2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- FET Type: P-Channel
- Turn-Off Delay Time: 40 ns
- Length: 10.67mm
- Pulsed Drain Current-Max (IDM): 46A
- Series: QFET?
- Nominal Vgs: 5 V
- Lifecycle Status: ACTIVE (Last Updated: 15 hours ago)
- Additional Feature: FAST SWITCHING
- Voltage - Rated DC: -200V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
- Power Dissipation: 3.13W
- Current Rating: -11.5A
- Rds On (Max) @ Id, Vgs: 470m Ω @ 5.75A, 10V
Search for similar products
FQB12P20TM Similar Products
The four parts on the right have similar specifications to ON Semiconductor & FQB12P20TM
ON Semiconductor — Manufacturer Introduction
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
