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  • Manufacturer No:
    FDC6301N
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    Get the PDF file
  • SKU:
    4138709
  • Description:
    ON SEMICONDUCTOR - FDC6301N - Dual MOSFET, Dual N Channel, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV
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Inventory:18000
  • Qty Unit Price price
  • 1 $0.157 $0.157
  • 10 $0.155 $1.55
  • 100 $0.153 $15.3
  • 1000 $0.151 $151
  • 10000 $0.1489 $1489

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  • Manufacturer No:
    FDC6301N
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    FDC6301N
  • SKU:
    4138709
  • Description:
    ON SEMICONDUCTOR - FDC6301N - Dual MOSFET, Dual N Channel, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV

FDC6301N Details

ON SEMICONDUCTOR - FDC6301N - Dual MOSFET, Dual N Channel, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV

FDC6301N Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Terminations: 6
  • Terminal Form: GULL WING
  • REACH SVHC: No SVHC
  • Voltage - Rated DC: 25V
  • Dual Supply Voltage: 25V
  • Height: 1mm
  • Operating Temperature: -55°C~150°C TJ
  • Transistor Application: SWITCHING
  • Gate to Source Voltage (Vgs): 8V
  • Subcategory: FET General Purpose Power
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Turn On Delay Time: 5 ns
  • Current Rating: 220mA
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Power Dissipation: 900mW
  • FET Feature: Logic Level Gate
  • Fall Time (Typ): 4.5 ns
  • Additional Feature: LOGIC LEVEL COMPATIBLE
  • Threshold Voltage: 850mV
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
  • Nominal Vgs: 850 mV
  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Factory Lead Time: 10 Weeks
  • Number of Pins: 6
  • Termination: SMD/SMT
  • Element Configuration: Dual
  • Drain to Source Breakdown Voltage: 25V
  • Transistor Element Material: SILICON
  • Length: 3mm
  • Published: 1997
  • Operating Mode: ENHANCEMENT MODE
  • Lifecycle Status: ACTIVE (Last Updated: 1 day ago)
  • Width: 1.7mm
  • Resistance: 4Ohm
  • Turn-Off Delay Time: 4 ns
  • Continuous Drain Current (ID): 220mA
  • Max Power Dissipation: 900mW
  • Power - Max: 700mW
  • FET Type: 2 N-Channel (Dual)
  • Rise Time: 4.5 ns
  • Vgs(th) (Max) @ Id: 1.5V @ 250μA
  • Weight: 36mg
  • Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
  • Rds On (Max) @ Id, Vgs: 4 Ω @ 400mA, 4.5V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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