BPW85BVishay Semiconductor Opto Division
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    • Manufacturer No：
      BPW85B
    • Manufacturer：
      Vishay Semiconductor Opto Division
    • Category：
      Optical Sensors - Phototransistors
    • Datasheet：
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    • SKU：
      414134
    • Description：
      Phototransistors NPN Phototransistor 70V 100mW 850nm
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    Inventory:5743
    • Qty Unit Price price
    • 1 $0.72 $0.72
    • 10 $0.712 $7.12
    • 100 $0.704 $70.4
    • 1000 $0.697 $697
    • 10000 $0.69 $6900

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    • Manufacturer No：
      BPW85B
    • Manufacturer：
      Vishay Semiconductor Opto Division
    • Category：
      Optical Sensors - Phototransistors
    • Datasheet：
      BPW85B
    • SKU：
      414134
    • Description：
      Phototransistors NPN Phototransistor 70V 100mW 850nm

    User Guide

    User Guide

    BPW85B Details

    Phototransistors NPN Phototransistor 70V 100mW 850nm

    BPW85B Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Packaging: Bulk
    • Mount: Through Hole
    • Number of Channels: 1
    • Factory Lead Time: 12 Weeks
    • Package / Case: Radial
    • Power Dissipation: 100mW
    • Power Consumption: 100mW
    • Published: 2001
    • Current Rating: 50mA
    • Height: 4.5mm
    • Lens Color: Clear
    • Length: 3.4mm
    • Collector Emitter Saturation Voltage: 300mV
    • Collector Emitter Breakdown Voltage: 70V
    • Orientation: Top View
    • Dark Current: 200nA
    • Operating Temperature: -40°C~100°C TA
    • Rise Time: 2μs
    • Lens Style: Clear, Domed
    • RoHS Status: ROHS3 Compliant
    • Number of Pins: 2
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Min Operating Temperature: -40°C
    • Max Power Dissipation: 100mW
    • Power - Max: 100mW
    • REACH SVHC: Unknown
    • Current - Collector (Ic) (Max): 100mA
    • Max Collector Current: 50mA
    • Max Operating Temperature: 100°C
    • Polarity: NPN
    • Width: 3.4mm
    • Collector Emitter Voltage (VCEO): 70V
    • Voltage - Collector Emitter Breakdown (Max): 70V
    • Current - Dark (Id) (Max): 200nA
    • Wavelength: 850nm
    • Viewing Angle: 50°
    • Fall Time (Typ): 2.3 μs
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