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Inventory:42000
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  • Manufacturer No:
    FDC655BN
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    FDC655BN
  • SKU:
    4144233
  • Description:
    MOSFET N-CH 30V 6.3A SSOT-6

FDC655BN Details

MOSFET N-CH 30V 6.3A SSOT-6

FDC655BN Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Qualification Status: Not Qualified
  • Number of Pins: 6
  • REACH SVHC: No SVHC
  • Factory Lead Time: 13 Weeks
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Drain to Source Breakdown Voltage: 30V
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: FET General Purpose Power
  • Threshold Voltage: 1.9V
  • Turn-Off Delay Time: 15 ns
  • Power Dissipation: 1.6W
  • Fall Time (Typ): 4 ns
  • Current Rating: 6.3A
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Series: PowerTrench?
  • Additional Feature: ULTRA-LOW RESISTANCE
  • Nominal Vgs: 1.9 V
  • Current - Continuous Drain (Id) @ 25°C: 6.3A Ta
  • Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • Lead Free: Lead Free
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Terminal Position: DUAL
  • Number of Terminations: 6
  • Terminal Form: GULL WING
  • Max Junction Temperature (Tj): 150°C
  • Published: 2006
  • Element Configuration: Single
  • Voltage - Rated DC: 30V
  • Length: 3mm
  • FET Type: N-Channel
  • Lifecycle Status: ACTIVE (Last Updated: 2 days ago)
  • Height: 1.1mm
  • Vgs (Max): ±20V
  • Width: 1.7mm
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Resistance: 25mOhm
  • Turn On Delay Time: 6 ns
  • Rise Time: 4 ns
  • Continuous Drain Current (ID): 6.3A
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Power Dissipation-Max: 1.6W Ta
  • Weight: 36mg
  • Feedback Cap-Max (Crss): 90 pF
  • Rds On (Max) @ Id, Vgs: 25m Ω @ 6.3A, 10V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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