Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:16686
- Qty Unit Price price
- 1 $0.836 $0.836
- 10 $0.827 $8.27
- 100 $0.818 $81.8
- 1000 $0.809 $809
- 10000 $0.8 $8000
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：FDT439N
- Manufacturer：ON Semiconductor
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：FDT439N
- SKU：4149923
- Description：MOSFET N-CH 30V 6.3A SOT-223
User Guide
User Guide
FDT439N Details
MOSFET N-CH 30V 6.3A SOT-223
FDT439N Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Terminal Position: DUAL
- Number of Terminations: 4
- Termination: SMD/SMT
- Max Junction Temperature (Tj): 150°C
- Factory Lead Time: 18 Weeks
- Voltage - Rated DC: 30V
- Dual Supply Voltage: 30V
- Pulsed Drain Current-Max (IDM): 20A
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Length: 6.5mm
- Case Connection: DRAIN
- Fall Time (Typ): 10 ns
- Width: 3.56mm
- Turn On Delay Time: 6 ns
- Current Rating: 6.3A
- Resistance: 45mOhm
- Vgs (Max): ±8V
- Lifecycle Status: ACTIVE (Last Updated: 10 hours ago)
- Threshold Voltage: 670mV
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
- Weight: 250.2mg
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Pins: 4
- Terminal Form: GULL WING
- REACH SVHC: No SVHC
- Transistor Element Material: SILICON
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 30V
- Power Dissipation: 3W
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Published: 1999
- Gate to Source Voltage (Vgs): 8V
- Height: 1.8mm
- Subcategory: FET General Purpose Power
- Rise Time: 10 ns
- Turn-Off Delay Time: 30 ns
- Package / Case: TO-261-4, TO-261AA
- Continuous Drain Current (ID): 6.3A
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On): 2.5V 4.5V
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Power Dissipation-Max: 3W Ta
- Current - Continuous Drain (Id) @ 25°C: 6.3A Ta
- Nominal Vgs: 670 mV
Search for similar products
FDT439N Similar Products
The four parts on the right have similar specifications to ON Semiconductor & FDT439N
ON Semiconductor — Manufacturer Introduction
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
