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Inventory:32850
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  • 1 $0.262 $0.262
  • 10 $0.259 $2.59
  • 100 $0.256 $25.6
  • 1000 $0.253 $253
  • 10000 $0.25 $2500

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  • Manufacturer No:
    MUN5312DW1T1G
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - Bipolar (BJT) - Arrays, Pre-Biased
  • Datasheet:
    MUN5312DW1T1G
  • SKU:
    4197446
  • Description:
    TRANS PREBIAS NPN/PNP SOT363

MUN5312DW1T1G Details

TRANS PREBIAS NPN/PNP SOT363

MUN5312DW1T1G Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Channels: 2
  • Packaging: Tape & Reel (TR)
  • Pbfree Code: yes
  • Surface Mount: YES
  • Lead Free: Lead Free
  • Min Operating Temperature: -55°C
  • Voltage - Rated DC: 50V
  • Max Breakdown Voltage: 50V
  • Number of Terminations: 6
  • Pin Count: 6
  • REACH SVHC: No SVHC
  • Power - Max: 250mW
  • Max Operating Temperature: 150°C
  • Element Configuration: Dual
  • Width: 1.25mm
  • Max Collector Current: 100mA
  • hFE Min: 60
  • Polarity: NPN
  • Height: 900μm
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Subcategory: BIP General Purpose Small Signal
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Resistor - Emitter Base (R2): 22k Ω
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA 10V
  • Base Part Number: MUN53**DW1
  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mounting Type: Surface Mount
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Factory Lead Time: 8 Weeks
  • Collector Emitter Breakdown Voltage: 50V
  • Collector Emitter Voltage (VCEO): 50V
  • Number of Pins: 6
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 40
  • Length: 2mm
  • Published: 2006
  • Current Rating: 100mA
  • Continuous Collector Current: 100mA
  • Transistor Application: SWITCHING
  • Lifecycle Status: ACTIVE (Last Updated: 1 day ago)
  • Current - Collector Cutoff (Max): 500nA
  • Collector Emitter Saturation Voltage: 250mV
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300μA, 10mA
  • Resistor - Base (R1): 22k Ω
  • Additional Feature: BUILT IN BIAS RESISTANCE RATIO IS 1
  • Max Power Dissipation: 187mW

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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