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  • Manufacturer No:
    MMBT6427LT1G
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - Bipolar (BJT) - Single
  • Datasheet:
    MMBT6427LT1G
  • SKU:
    4198355
  • Description:
    Bipolar (BJT) Transistor NPN - Darlington 40 V 500 mA - 225 mW Surface Mount SOT-23-3 (TO-236)

MMBT6427LT1G Details

Bipolar (BJT) Transistor NPN - Darlington 40 V 500 mA - 225 mW Surface Mount SOT-23-3 (TO-236)

MMBT6427LT1G Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Terminations: 3
  • Pin Count: 3
  • Terminal Form: GULL WING
  • REACH SVHC: No SVHC
  • Emitter Base Voltage (VEBO): 12V
  • Published: 2006
  • Element Configuration: Single
  • Collector Emitter Breakdown Voltage: 40V
  • Collector Base Voltage (VCBO): 40V
  • Operating Temperature: -55°C~150°C TJ
  • Continuous Collector Current: 500mA
  • Current - Collector Cutoff (Max): 1μA
  • Width: 1.4mm
  • Polarity: NPN
  • Current Rating: 600mA
  • Max Power Dissipation: 225mW
  • Weight: 4.535924g
  • Transition Frequency: 130MHz
  • Length: 3.04mm
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA 5V
  • Base Part Number: MMBT6427
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • Surface Mount: YES
  • Lead Free: Lead Free
  • Terminal Position: DUAL
  • Number of Pins: 3
  • Factory Lead Time: 10 Weeks
  • Termination: SMD/SMT
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 40
  • Transistor Element Material: SILICON
  • Voltage - Rated DC: 40V
  • Collector Emitter Voltage (VCEO): 40V
  • Max Breakdown Voltage: 40V
  • Max Collector Current: 500mA
  • Collector Emitter Saturation Voltage: 1.2V
  • Lifecycle Status: ACTIVE (Last Updated: 3 days ago)
  • Halogen Free: Halogen Free
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Subcategory: Other Transistors
  • Power Dissipation: 225mW
  • hFE Min: 10000
  • Transistor Type: NPN - Darlington
  • Height: 1.01mm
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500μA, 500mA

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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