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- Manufacturer No：NTD4815N-35G
- Manufacturer：ON Semiconductor
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：NTD4815N-35G
- SKU：4239386
- Description：MOSFET NCH 30V 6.9A IPAK TRIMMED
User Guide
User Guide
NTD4815N-35G Details
MOSFET NCH 30V 6.9A IPAK TRIMMED
NTD4815N-35G Specification Parameters
- Part Status: Active
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Pin Count: 3
- REACH SVHC: No SVHC
- Published: 2008
- Transistor Element Material: SILICON
- Factory Lead Time: 2 Weeks
- Voltage - Rated DC: 30V
- Dual Supply Voltage: 30V
- Technology: MOSFET (Metal Oxide)
- Threshold Voltage: 1.5V
- Operating Mode: ENHANCEMENT MODE
- Lifecycle Status: ACTIVE (Last Updated: 1 day ago)
- Subcategory: FET General Purpose Power
- Current Rating: 35A
- Width: 7.49mm
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- Nominal Vgs: 2.5 V
- Package / Case: TO-251-3 Stub Leads, IPak
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 11.5V
- Pulsed Drain Current-Max (IDM): 87A
- Rise Time: 21.4 ns
- Avalanche Energy Rating (Eas): 60.5 mJ
- Current - Continuous Drain (Id) @ 25°C: 6.9A Ta 35A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 12V
- Surface Mount: NO
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Termination: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Qualification Status: Not Qualified
- Reach Compliance Code: not_compliant
- Terminal Finish: Tin (Sn)
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Breakdown Voltage: 30V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Length: 6.73mm
- Continuous Drain Current (ID): 35A
- Drain Current-Max (Abs) (ID): 6.9A
- Turn On Delay Time: 10.5 ns
- Height: 2.38mm
- Drain-source On Resistance-Max: 0.025Ohm
- Turn-Off Delay Time: 11.4 ns
- Fall Time (Typ): 21.4 ns
- Rds On (Max) @ Id, Vgs: 15m Ω @ 30A, 10V
- Power Dissipation-Max: 1.26W Ta 32.6W Tc
- Power Dissipation: 32.6W
- Gate Charge (Qg) (Max) @ Vgs: 14.1nC @ 11.5V
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ON Semiconductor — Manufacturer Introduction
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.
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