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  • Manufacturer No:
    NTHC5513T1G
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    NTHC5513T1G
  • SKU:
    4243441
  • Description:
    MOSFET N/P-CH 20V 1206A

NTHC5513T1G Details

MOSFET N/P-CH 20V 1206A

NTHC5513T1G Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • JESD-609 Code: e3
  • Number of Pins: 8
  • Pin Count: 8
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 40
  • Terminal Finish: Tin (Sn)
  • Transistor Element Material: SILICON
  • Pulsed Drain Current-Max (IDM): 10A
  • Operating Temperature: -55°C~150°C TJ
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Length: 3.1mm
  • Width: 1.7mm
  • Turn On Delay Time: 7 ns
  • Weight: 4.535924g
  • Continuous Drain Current (ID): 3.9A
  • FET Feature: Logic Level Gate
  • Max Power Dissipation: 1.1W
  • Turn-Off Delay Time: 33 ns
  • FET Type: N and P-Channel
  • Vgs(th) (Max) @ Id: 1.2V @ 250μA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Rds On (Max) @ Id, Vgs: 80m Ω @ 2.9A, 4.5V
  • Base Part Number: NTHC5513
  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Packaging: Tape & Reel (TR)
  • Pbfree Code: yes
  • Surface Mount: YES
  • Lead Free: Lead Free
  • Number of Terminations: 8
  • REACH SVHC: No SVHC
  • Gate to Source Voltage (Vgs): 12V
  • Element Configuration: Dual
  • Published: 2005
  • Factory Lead Time: 2 Weeks
  • Voltage - Rated DC: 20V
  • Lifecycle Status: ACTIVE (Last Updated: 1 week ago)
  • Height: 1.1mm
  • Terminal Form: C BEND
  • Subcategory: Other Transistors
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Threshold Voltage: 600mV
  • Rise Time: 13 ns
  • Drain to Source Breakdown Voltage: -20V
  • Current Rating: 3.1A
  • Power Dissipation: 1.1W
  • Package / Case: 8-SMD, Flat Lead
  • Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
  • Nominal Vgs: 600 mV
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A 2.2A

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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