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Inventory:7043
  • Qty Unit Price price
  • 1 $175.864 $175.864
  • 10 $174.122 $1741.22
  • 100 $172.398 $17239.8
  • 1000 $170.691 $170691
  • 10000 $169 $1690000

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  • Manufacturer No:
    RFD12N06RLESM9A
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    RFD12N06RLESM9A
  • SKU:
    4251114
  • Description:
    MOSFET 60V Single

RFD12N06RLESM9A Details

MOSFET 60V Single

RFD12N06RLESM9A Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Factory Lead Time: 8 Weeks
  • Terminal Form: GULL WING
  • Drain to Source Breakdown Voltage: 60V
  • REACH SVHC: Unknown
  • Element Configuration: Single
  • Published: 2002
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • JESD-30 Code: R-PSSO-G2
  • Subcategory: FET General Purpose Power
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Continuous Drain Current (ID): 17mA
  • Turn On Delay Time: 13 ns
  • JEDEC-95 Code: TO-252AA
  • Rise Time: 34 ns
  • Turn-Off Delay Time: 41 ns
  • Weight: 260.37mg
  • Resistance: 71mOhm
  • Power Dissipation-Max: 49W Tc
  • Rds On (Max) @ Id, Vgs: 63m Ω @ 18A, 10V
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Pins: 3
  • Voltage - Rated DC: 60V
  • Threshold Voltage: 3V
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 16V
  • Height: 2.39mm
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Lifecycle Status: ACTIVE (Last Updated: 1 day ago)
  • Case Connection: DRAIN
  • Length: 6.73mm
  • Fall Time (Typ): 50 ns
  • Current Rating: 17A
  • Width: 6.22mm
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Vgs (Max): ±16V
  • Series: UltraFET?
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Current - Continuous Drain (Id) @ 25°C: 18A Tc
  • Power Dissipation: 49W
  • Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 25V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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