Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:300000
- Qty Unit Price price
- 1 $7.812 $7.812
- 10 $7.734 $77.34
- 100 $7.657 $765.7
- 1000 $7.581 $7581
- 10000 $7.505 $75050
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：NDS352AP
- Manufacturer：ON Semiconductor
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：NDS352AP
- SKU：4256301
- Description：MOSFET P-CH 30V 0.9A SSOT3
User Guide
User Guide
NDS352AP Details
MOSFET P-CH 30V 0.9A SSOT3
NDS352AP Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Terminations: 3
- Factory Lead Time: 10 Weeks
- REACH SVHC: No SVHC
- Power Dissipation: 500mW
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 30V
- Packaging: Cut Tape (CT)
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Subcategory: Other Transistors
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Continuous Drain Current (ID): 900mA
- Resistance: 500mOhm
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- Fall Time (Typ): 16 ns
- Drain to Source Breakdown Voltage: -30V
- Dual Supply Voltage: -30V
- Weight: 30mg
- Power Dissipation-Max: 500mW Ta
- Threshold Voltage: -800mV
- Nominal Vgs: -1.7 V
- Rds On (Max) @ Id, Vgs: 300m Ω @ 1A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Terminal Position: DUAL
- Number of Pins: 3
- Terminal Form: GULL WING
- Max Junction Temperature (Tj): 150°C
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Lifecycle Status: ACTIVE (Last Updated: 3 days ago)
- Published: 1997
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- Width: 3.05mm
- Turn-Off Delay Time: 35 ns
- FET Type: P-Channel
- Turn On Delay Time: 8 ns
- Height: 1.22mm
- Rise Time: 16 ns
- Voltage - Rated DC: -30V
- Additional Feature: LOGIC LEVEL COMPATIBLE
- Drain Current-Max (Abs) (ID): 0.9A
- Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
- Current - Continuous Drain (Id) @ 25°C: 900mA Ta
- Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 15V
- Current Rating: -900mA
Search for similar products
NDS352AP Similar Products
The four parts on the right have similar specifications to ON Semiconductor & NDS352AP
ON Semiconductor — Manufacturer Introduction
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
