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Inventory:300000
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  • Manufacturer No:
    NTR4501NT1G
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    NTR4501NT1G
  • SKU:
    4262353
  • Description:
    N-Channel 20 V 3.2A (Ta) 1.25W (Tj) Surface Mount SOT-23-3 (TO-236)

NTR4501NT1G Details

N-Channel 20 V 3.2A (Ta) 1.25W (Tj) Surface Mount SOT-23-3 (TO-236)

NTR4501NT1G Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Terminations: 3
  • Pin Count: 3
  • REACH SVHC: No SVHC
  • Gate to Source Voltage (Vgs): 12V
  • Published: 2008
  • Transistor Element Material: SILICON
  • Voltage - Rated DC: 20V
  • Operating Temperature: -55°C~150°C TJ
  • Threshold Voltage: 1.2V
  • FET Type: N-Channel
  • Width: 1.3mm
  • Halogen Free: Halogen Free
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Current Rating: 3.2A
  • Fall Time (Typ): 12 ns
  • Rise Time: 12 ns
  • Height: 940μm
  • Turn On Delay Time: 6.5 ns
  • Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
  • Nominal Vgs: 1.2 V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A Ta
  • Rds On (Max) @ Id, Vgs: 80m Ω @ 3.6A, 4.5V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • Surface Mount: YES
  • Lead Free: Lead Free
  • Terminal Position: DUAL
  • Number of Pins: 3
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 40
  • Factory Lead Time: 11 Weeks
  • Element Configuration: Single
  • Drain to Source Breakdown Voltage: 20V
  • Length: 2.9mm
  • Lifecycle Status: ACTIVE (Last Updated: 3 days ago)
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: FET General Purpose Power
  • Continuous Drain Current (ID): 3.2A
  • Turn-Off Delay Time: 12 ns
  • Power Dissipation: 1.25W
  • Resistance: 70mOhm
  • Vgs (Max): ±12V
  • Vgs(th) (Max) @ Id: 1.2V @ 250μA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 10V
  • Power Dissipation-Max: 1.25W Tj

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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