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  • Manufacturer No:
    STD10NM60N
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    STD10NM60N
  • SKU:
    4535787
  • Description:
    MOSFET N-CH 600V 10A DPAK

STD10NM60N Details

MOSFET N-CH 600V 10A DPAK

STD10NM60N Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Pin Count: 3
  • REACH SVHC: No SVHC
  • Peak Reflow Temperature (Cel): 260
  • Threshold Voltage: 3V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Continuous Drain Current (ID): 10A
  • Packaging: Cut Tape (CT)
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Terminal Finish: Matte Tin (Sn) - annealed
  • Subcategory: FET General Purpose Power
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Width: 6.2mm
  • Height: 2.4mm
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Resistance: 600mOhm
  • Turn-Off Delay Time: 32 ns
  • Power Dissipation: 70W
  • Avalanche Energy Rating (Eas): 200 mJ
  • Series: MDmesh? II
  • Base Part Number: STD10
  • Rds On (Max) @ Id, Vgs: 550m Ω @ 4A, 10V
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Number of Pins: 3
  • Terminal Form: GULL WING
  • Factory Lead Time: 16 Weeks
  • Time@Peak Reflow Temperature-Max (s): 30
  • Gate to Source Voltage (Vgs): 25V
  • Transistor Element Material: SILICON
  • Drain to Source Breakdown Voltage: 600V
  • Operating Temperature: -55°C~150°C TJ
  • Drain Current-Max (Abs) (ID): 8A
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • JESD-30 Code: R-PSSO-G2
  • Length: 6.6mm
  • Turn On Delay Time: 10 ns
  • Fall Time (Typ): 15 ns
  • Lifecycle Status: ACTIVE (Last Updated: 7 months ago)
  • Rise Time: 12 ns
  • Nominal Vgs: 3 V
  • Vgs (Max): ±25V
  • Current - Continuous Drain (Id) @ 25°C: 10A Tc
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Power Dissipation-Max: 70W Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 50V

STMicroelectronics — Manufacturer Introduction

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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