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STF11N52K3123
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STF11N52K3
  • Manufacturer No:
    STF11N52K3
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    STF11N52K3
  • SKU:
    4536863
  • Description:
    MOSFET N-channel 525 V 0.41 Ohm, 10 A SuperMESH3

STF11N52K3 Details

MOSFET N-channel 525 V 0.41 Ohm, 10 A SuperMESH3

STF11N52K3 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Lead Free: Lead Free
  • Packaging: Tube
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Transistor Element Material: SILICON
  • Continuous Drain Current (ID): 10A
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Power Dissipation: 30W
  • Width: 4.6mm
  • Length: 10.4mm
  • Package / Case: TO-220-3 Full Pack
  • Fall Time (Typ): 42 ns
  • Threshold Voltage: 3.75V
  • Current - Continuous Drain (Id) @ 25°C: 10A Tc
  • Vgs(th) (Max) @ Id: 4.5V @ 50μA
  • Drain to Source Breakdown Voltage: 525V
  • Series: SuperMESH3?
  • Base Part Number: STF11
  • Turn-Off Delay Time: 281 ns
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Radiation Hardening: No
  • Part Status: Obsolete
  • Number of Terminations: 3
  • Pin Count: 3
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Gate to Source Voltage (Vgs): 30V
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Pulsed Drain Current-Max (IDM): 40A
  • JEDEC-95 Code: TO-220AB
  • Vgs (Max): ±30V
  • Turn On Delay Time: 7 ns
  • Resistance: 510mOhm
  • Height: 16.4mm
  • Rise Time: 18ns
  • Power Dissipation-Max: 30W Tc
  • Additional Feature: ULTRA-LOW RESISTANCE
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
  • Avalanche Energy Rating (Eas): 170 mJ
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 50V
  • Rds On (Max) @ Id, Vgs: 510m Ω @ 5A, 10V

STMicroelectronics — Manufacturer Introduction

STMicroelectronics
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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