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- Manufacturer No：STF13N60M2
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STF13N60M2
- SKU：4537105
- Description：MOSFET N-CH 600V 11A TO-220FP
User Guide
User Guide
STF13N60M2 Details
MOSFET N-CH 600V 11A TO-220FP
STF13N60M2 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Packaging: Tube
- Factory Lead Time: 16 Weeks
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Drain to Source Voltage (Vdss): 600V
- FET Type: N-Channel
- Power Dissipation: 25W
- Drain to Source Breakdown Voltage: 650V
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Length: 10.4mm
- Turn On Delay Time: 11 ns
- Vgs (Max): ±25V
- Height: 16.4mm
- Current - Continuous Drain (Id) @ 25°C: 11A Tc
- Power Dissipation-Max: 25W Tc
- Rds On (Max) @ Id, Vgs: 380m Ω @ 5.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 100V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Number of Pins: 3
- Gate to Source Voltage (Vgs): 25V
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Rise Time: 10ns
- Width: 4.6mm
- Continuous Drain Current (ID): 11A
- Package / Case: TO-220-3 Full Pack
- Fall Time (Typ): 9.5 ns
- Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
- Turn-Off Delay Time: 41 ns
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Series: MDmesh? II Plus
- Base Part Number: STF13
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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