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- Manufacturer No：STGWT20V60DF
- Manufacturer：STMicroelectronics
- Category：Transistors - IGBTs - Single
- Datasheet：STGWT20V60DF
- SKU：4537221
- Description：IGBT 600V 40A 167W TO3P-3
User Guide
User Guide
STGWT20V60DF Details
IGBT 600V 40A 167W TO3P-3
STGWT20V60DF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Radiation Hardening: No
- Number of Pins: 3
- Input Type: Standard
- Collector Emitter Voltage (VCEO): 600V
- Operating Temperature: -55°C~175°C TJ
- Factory Lead Time: 32 Weeks
- Polarity/Channel Type: N-CHANNEL
- Width: 5.7mm
- IGBT Type: Trench Field Stop
- Reverse Recovery Time: 40ns
- Height: 26.7mm
- Max Power Dissipation: 167W
- Gate Charge: 116nC
- Td (on/off) @ 25°C: 38ns/149ns
- Base Part Number: STGWT20
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- ECCN Code: EAR99
- Packaging: Tube
- Element Configuration: Single
- Collector Emitter Breakdown Voltage: 600V
- Gate-Emitter Voltage-Max: 20V
- Max Collector Current: 40A
- Collector Emitter Saturation Voltage: 2.3V
- Current - Collector Pulsed (Icm): 80A
- Subcategory: Insulated Gate BIP Transistors
- Length: 15.7mm
- Package / Case: TO-3P-3, SC-65-3
- Power Dissipation: 167W
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
- Switching Energy: 200μJ (on), 130μJ (off)
- Test Condition: 400V, 20A, 15V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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