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- Manufacturer No：MJD122T4
- Manufacturer：STMicroelectronics
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：MJD122T4
- SKU：4543311
- Description：MJD122 Series NPN 100 V 8 A Complementary Power Darlington Transistor - TO-252-3
User Guide
User Guide
MJD122T4 Details
MJD122 Series NPN 100 V 8 A Complementary Power Darlington Transistor - TO-252-3
MJD122T4 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Emitter Base Voltage (VEBO): 5V
- Number of Pins: 3
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Collector Emitter Breakdown Voltage: 100V
- Collector Emitter Voltage (VCEO): 100V
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- hFE Min: 100
- Max Collector Current: 8A
- Transistor Application: SWITCHING
- Terminal Finish: Matte Tin (Sn) - annealed
- Power Dissipation: 20W
- Subcategory: Other Transistors
- Length: 6.6mm
- Width: 6.2mm
- Case Connection: COLLECTOR
- VCEsat-Max: 4 V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A 4V
- Base Part Number: MJD122
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Factory Lead Time: 8 Weeks
- Pin Count: 3
- REACH SVHC: No SVHC
- Voltage - Rated DC: 100V
- Collector Base Voltage (VCBO): 100V
- Max Breakdown Voltage: 100V
- Current Rating: 5A
- Element Configuration: Single
- Collector Emitter Saturation Voltage: 2V
- Current - Collector Cutoff (Max): 10μA
- Polarity: NPN
- Max Power Dissipation: 20W
- Operating Temperature: 150°C TJ
- JESD-30 Code: R-PSSO-G2
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Height: 2.4mm
- Transistor Type: NPN - Darlington
- Weight: 1.799996g
- Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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