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- Manufacturer No：STGB10NB37LZ
- Manufacturer：STMicroelectronics
- Category：Transistors - IGBTs - Single
- Datasheet：STGB10NB37LZ
- SKU：4544848
- Description：Trans IGBT Chip N-CH 440V 20A Automotive 3-Pin(2+Tab) D2PAK Tube
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User Guide
STGB10NB37LZ Details
Trans IGBT Chip N-CH 440V 20A Automotive 3-Pin(2+Tab) D2PAK Tube
STGB10NB37LZ Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Part Status: Obsolete
- Number of Pins: 3
- Terminal Form: GULL WING
- Collector Emitter Voltage (VCEO): 1.8V
- Element Configuration: Single
- Max Collector Current: 20A
- Terminal Finish: Matte Tin (Sn) - annealed
- Current - Collector Pulsed (Icm): 40A
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Gate-Emitter Thr Voltage-Max: 2.4V
- Length: 10.4mm
- Collector Emitter Breakdown Voltage: 440V
- Subcategory: Insulated Gate BIP Transistors
- Max Power Dissipation: 125W
- Series: PowerMESH?
- Turn On Time: 860 ns
- Additional Feature: VOLTAGE CLAMPING
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A
- Switching Energy: 2.4mJ (on), 5mJ (off)
- Turn Off Time-Nom (toff): 17800 ns
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Packaging: Tube
- Pin Count: 3
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Input Type: Standard
- Collector Emitter Saturation Voltage: 1.2V
- Peak Reflow Temperature (Cel): 245
- JESD-30 Code: R-PSSO-G2
- Polarity/Channel Type: N-CHANNEL
- Height: 4.6mm
- Case Connection: COLLECTOR
- Operating Temperature: -65°C~175°C TJ
- Power Dissipation: 125W
- Width: 9.35mm
- Transistor Application: AUTOMOTIVE IGNITION
- Gate Charge: 28nC
- Base Part Number: STGB10
- Td (on/off) @ 25°C: 1.3μs/8μs
- Test Condition: 328V, 10A, 1k Ω, 5V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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