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- Manufacturer No：STD5N20LT4
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STD5N20LT4
- SKU：4546939
- Description：MOSFET Transistor, N Channel, 2.5 A, 200 V, 650 mohm, 5 V, 2.5 V RoHS Compliant: Yes
User Guide
User Guide
STD5N20LT4 Details
MOSFET Transistor, N Channel, 2.5 A, 200 V, 650 mohm, 5 V, 2.5 V RoHS Compliant: Yes
STD5N20LT4 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 3
- Terminal Form: GULL WING
- REACH SVHC: No SVHC
- Voltage - Rated DC: 200V
- Dual Supply Voltage: 200V
- Time@Peak Reflow Temperature-Max (s): 30
- Current Rating: 5A
- Continuous Drain Current (ID): 5A
- Element Configuration: Single
- Pulsed Drain Current-Max (IDM): 20A
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Terminal Finish: Matte Tin (Sn) - annealed
- JESD-30 Code: R-PSSO-G2
- Subcategory: FET General Purpose Power
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Lifecycle Status: ACTIVE (Last Updated: 7 months ago)
- Resistance: 700mOhm
- Nominal Vgs: 2.5 V
- Current - Continuous Drain (Id) @ 25°C: 5A Tc
- Fall Time (Typ): 15.5 ns
- Power Dissipation-Max: 33W Tc
- Base Part Number: STD5N
- Vgs(th) (Max) @ Id: 2.5V @ 50μA
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Drive Voltage (Max Rds On,Min Rds On): 5V
- Pin Count: 3
- Termination: SMD/SMT
- Peak Reflow Temperature (Cel): 260
- Drain to Source Breakdown Voltage: 200V
- Threshold Voltage: 2.5V
- Max Junction Temperature (Tj): 150°C
- Drain Current-Max (Abs) (ID): 5A
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Length: 6.6mm
- Width: 6.2mm
- Power Dissipation: 33W
- Turn-Off Delay Time: 14 ns
- Turn On Delay Time: 11.5 ns
- Height: 2.63mm
- Series: STripFET?
- Rise Time: 21.5 ns
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 25V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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