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Inventory:1867
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  • 10 $1.475 $14.75
  • 100 $1.46 $146
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  • Manufacturer No:
    STGB10NC60KDT4
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - IGBTs - Single
  • Datasheet:
    STGB10NC60KDT4
  • SKU:
    4547281
  • Description:
    IGBT 600V 20A 65W D2PAK

STGB10NC60KDT4 Details

IGBT 600V 20A 65W D2PAK

STGB10NC60KDT4 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Pins: 3
  • Terminal Form: GULL WING
  • REACH SVHC: No SVHC
  • Time@Peak Reflow Temperature-Max (s): 30
  • Element Configuration: Single
  • Voltage - Rated DC: 600V
  • Collector Emitter Breakdown Voltage: 600V
  • Max Breakdown Voltage: 600V
  • Continuous Drain Current (ID): 10A
  • Max Collector Current: 20A
  • Case Connection: ISOLATED
  • Peak Reflow Temperature (Cel): 245
  • JESD-30 Code: R-PSSO-G2
  • Polarity/Channel Type: N-CHANNEL
  • Lifecycle Status: ACTIVE (Last Updated: 7 months ago)
  • Length: 10.4mm
  • Transistor Application: POWER CONTROL
  • Reverse Recovery Time: 22 ns
  • Max Power Dissipation: 65W
  • Turn On Time: 23 ns
  • Series: PowerMESH?
  • Gate Charge: 19nC
  • Turn Off Time-Nom (toff): 242 ns
  • Td (on/off) @ 25°C: 17ns/72ns
  • Switching Energy: 55μJ (on), 85μJ (off)
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Factory Lead Time: 8 Weeks
  • Pin Count: 3
  • Termination: SMD/SMT
  • Collector Emitter Saturation Voltage: 2.5V
  • Transistor Element Material: SILICON
  • Input Type: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Collector Emitter Voltage (VCEO): 600V
  • Current Rating: 10A
  • Gate-Emitter Voltage-Max: 20V
  • Operating Temperature: -55°C~150°C TJ
  • Current - Collector Pulsed (Icm): 30A
  • Gate-Emitter Thr Voltage-Max: 7V
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Height: 4.6mm
  • Power Dissipation: 60W
  • Rise Time: 6 ns
  • Subcategory: Insulated Gate BIP Transistors
  • Turn On Delay Time: 17 ns
  • Power - Max: 65W
  • Width: 9.35mm
  • Turn-Off Delay Time: 72 ns
  • Weight: 2.240009g
  • Test Condition: 390V, 5A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
  • Base Part Number: STGB10

STMicroelectronics — Manufacturer Introduction

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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