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- Manufacturer No：STD6N60M2
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STD6N60M2
- SKU：4548064
- Description：MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2
User Guide
User Guide
STD6N60M2 Details
MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2
STD6N60M2 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Channels: 1
- Radiation Hardening: No
- Number of Pins: 3
- Gate to Source Voltage (Vgs): 25V
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Continuous Drain Current (ID): 4.5A
- Width: 6.2mm
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Turn On Delay Time: 9.5 ns
- Vgs (Max): ±25V
- Current - Continuous Drain (Id) @ 25°C: 4.5A Tc
- Series: MDmesh? II Plus
- Rise Time: 7.4ns
- Rds On (Max) @ Id, Vgs: 1.2 Ω @ 2.25A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Lead Free: Lead Free
- Factory Lead Time: 16 Weeks
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Drain to Source Breakdown Voltage: 600V
- FET Type: N-Channel
- Length: 6.6mm
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Height: 2.4mm
- Resistance: 1.2Ohm
- Turn-Off Delay Time: 24 ns
- Power Dissipation-Max: 60W Tc
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
- Fall Time (Typ): 22.5 ns
- Base Part Number: STD6N
- Input Capacitance (Ciss) (Max) @ Vds: 232pF @ 100V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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