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- Manufacturer No：STB12NM60N-1
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STB12NM60N-1
- SKU：4548908
- Description：MOSFET N-CH 600V 10A I2PAK
User Guide
User Guide
STB12NM60N-1 Details
MOSFET N-CH 600V 10A I2PAK
STB12NM60N-1 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Part Status: Obsolete
- Number of Terminations: 3
- Pin Count: 3
- Time@Peak Reflow Temperature-Max (s): 40
- Gate to Source Voltage (Vgs): 25V
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 600V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Peak Reflow Temperature (Cel): 245
- Subcategory: FET General Purpose Power
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
- Vgs (Max): ±25V
- Current - Continuous Drain (Id) @ 25°C: 10A Tc
- Series: MDmesh? II
- Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 50V
- Rds On (Max) @ Id, Vgs: 410m Ω @ 5A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- JESD-609 Code: e3
- Packaging: Tube
- Number of Pins: 3
- Qualification Status: Not Qualified
- Reach Compliance Code: not_compliant
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Continuous Drain Current (ID): 10A
- Terminal Finish: MATTE TIN
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM): 40A
- Fall Time (Typ): 10 ns
- Turn-Off Delay Time: 60 ns
- Power Dissipation: 90W
- Rise Time: 9ns
- Avalanche Energy Rating (Eas): 200 mJ
- Power Dissipation-Max: 90W Tc
- Drain-source On Resistance-Max: 0.41Ohm
- Base Part Number: STB12N
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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