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- Manufacturer No：STI42N65M5
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STI42N65M5
- SKU：4550101
- Description：MOSFET N-CH 650V 33A I2PAK
User Guide
User Guide
STI42N65M5 Details
MOSFET N-CH 650V 33A I2PAK
STI42N65M5 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Factory Lead Time: 17 Weeks
- FET Type: N-Channel
- Threshold Voltage: 4V
- Operating Mode: ENHANCEMENT MODE
- Drain to Source Breakdown Voltage: 650V
- Length: 10.4mm
- Vgs(th) (Max) @ Id: 5V @ 250μA
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
- Vgs (Max): ±25V
- Turn-Off Delay Time: 65 ns
- Height: 9.35mm
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 33A Tc
- Series: MDmesh? V
- Avalanche Energy Rating (Eas): 950 mJ
- Rds On (Max) @ Id, Vgs: 79m Ω @ 16.5A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 3
- Pin Count: 3
- Gate to Source Voltage (Vgs): 25V
- Terminal Finish: Tin (Sn)
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Subcategory: FET General Purpose Power
- Width: 4.6mm
- Fall Time (Typ): 13 ns
- Continuous Drain Current (ID): 33A
- Rise Time: 24 ns
- Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
- Nominal Vgs: 4 V
- Power Dissipation: 190W
- Power Dissipation-Max: 190W Tc
- Turn On Delay Time: 61 ns
- Drain-source On Resistance-Max: 0.079Ohm
- Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 100V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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