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  • Manufacturer No:
    STD18N55M5
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    4550380
  • Description:
    Mosfet Transistor, N Channel, 13 A, 550 V, 0.18 Ohm, 10 V, 4 V Rohs Compliant: Yes
  • Quantity:
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Inventory:3709
  • Qty Unit Price price
  • 1 $2.843 $2.843
  • 10 $2.814 $28.14
  • 100 $2.786 $278.6
  • 1000 $2.758 $2758
  • 10000 $2.73 $27300

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  • Manufacturer No:
    STD18N55M5
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    STD18N55M5
  • SKU:
    4550380
  • Description:
    Mosfet Transistor, N Channel, 13 A, 550 V, 0.18 Ohm, 10 V, 4 V Rohs Compliant: Yes

STD18N55M5 Details

Mosfet Transistor, N Channel, 13 A, 550 V, 0.18 Ohm, 10 V, 4 V Rohs Compliant: Yes

STD18N55M5 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Number of Pins: 3
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Continuous Drain Current (ID): 13A
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Terminal Finish: Matte Tin (Sn) - annealed
  • JESD-30 Code: R-PSSO-G2
  • Drain to Source Breakdown Voltage: 550V
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Width: 6.2mm
  • Fall Time (Typ): 13 ns
  • Vgs(th) (Max) @ Id: 5V @ 250μA
  • Power Dissipation: 90W
  • Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
  • Pulsed Drain Current-Max (IDM): 56A
  • Current - Continuous Drain (Id) @ 25°C: 16A Tc
  • Series: MDmesh? V
  • Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 100V
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Pin Count: 3
  • REACH SVHC: No SVHC
  • Gate to Source Voltage (Vgs): 25V
  • Transistor Element Material: SILICON
  • Factory Lead Time: 17 Weeks
  • FET Type: N-Channel
  • Threshold Voltage: 4V
  • Operating Mode: ENHANCEMENT MODE
  • Operating Temperature: 150°C TJ
  • Subcategory: FET General Purpose Power
  • Length: 6.6mm
  • Drain Current-Max (Abs) (ID): 9A
  • Height: 2.4mm
  • Resistance: 180mOhm
  • Rise Time: 9.5 ns
  • Vgs (Max): ±25V
  • Turn-Off Delay Time: 29 ns
  • Power Dissipation-Max: 110W Tc
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Base Part Number: STD18
  • Rds On (Max) @ Id, Vgs: 192m Ω @ 8A, 10V

STMicroelectronics — Manufacturer Introduction

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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