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  • Manufacturer No:
    STGF10NB60SD
  • Manufacturer:
  • Category:
    Transistors - IGBTs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    4550800
  • Description:
    STMICROELECTRONICS STGF10NB60SD IGBT Single Transistor, 20 A, 1.8 V, 25 W, 600 V, TO-220FP, 3 Pins
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Inventory:983
  • Qty Unit Price price
  • 1 $2.354 $2.354
  • 10 $2.33 $23.3
  • 100 $2.306 $230.6
  • 1000 $2.283 $2283
  • 10000 $2.26 $22600

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  • Manufacturer No:
    STGF10NB60SD
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - IGBTs - Single
  • Datasheet:
    STGF10NB60SD
  • SKU:
    4550800
  • Description:
    STMICROELECTRONICS STGF10NB60SD IGBT Single Transistor, 20 A, 1.8 V, 25 W, 600 V, TO-220FP, 3 Pins

STGF10NB60SD Details

STMICROELECTRONICS STGF10NB60SD IGBT Single Transistor, 20 A, 1.8 V, 25 W, 600 V, TO-220FP, 3 Pins

STGF10NB60SD Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Gate-Emitter Thr Voltage-Max: 5V
  • Packaging: Tube
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Transistor Element Material: SILICON
  • Input Type: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Collector Emitter Voltage (VCEO): 600V
  • Current Rating: 10A
  • Continuous Drain Current (ID): 20A
  • Case Connection: ISOLATED
  • Power Dissipation: 25W
  • Terminal Finish: Matte Tin (Sn) - annealed
  • JEDEC-95 Code: TO-220AB
  • Current - Collector Pulsed (Icm): 80A
  • Length: 10.4mm
  • Transistor Application: POWER CONTROL
  • Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
  • Reverse Recovery Time: 37ns
  • Gate Charge: 33nC
  • Base Part Number: STGF10
  • Test Condition: 480V, 10A, 1k Ω, 15V
  • Td (on/off) @ 25°C: 700ns/1.2μs
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Factory Lead Time: 8 Weeks
  • Number of Terminations: 3
  • Pin Count: 3
  • Collector Emitter Saturation Voltage: 1.8V
  • Element Configuration: Single
  • Voltage - Rated DC: 600V
  • Collector Emitter Breakdown Voltage: 600V
  • Max Breakdown Voltage: 600V
  • Gate-Emitter Voltage-Max: 20V
  • Operating Temperature: -55°C~150°C TJ
  • Max Power Dissipation: 25W
  • Height: 20mm
  • Max Collector Current: 23A
  • Polarity/Channel Type: N-CHANNEL
  • Width: 4.6mm
  • Package / Case: TO-220-3 Full Pack
  • Subcategory: Insulated Gate BIP Transistors
  • Series: PowerMESH?
  • Rise Time: 460 ns
  • Turn On Time: 1160 ns
  • Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 10A
  • Switching Energy: 600μJ (on), 5mJ (off)
  • Turn Off Time-Nom (toff): 3100 ns

STMicroelectronics — Manufacturer Introduction

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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