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  • Manufacturer No:
    STW12NM60N
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    STW12NM60N
  • SKU:
    4552726
  • Description:
    MOSFET N-CH 600V 10A TO-247

STW12NM60N Details

MOSFET N-CH 600V 10A TO-247

STW12NM60N Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Part Status: Obsolete
  • Number of Terminations: 3
  • Gate to Source Voltage (Vgs): 25V
  • Transistor Element Material: SILICON
  • Drain to Source Breakdown Voltage: 600V
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Case Connection: DRAIN
  • Fall Time (Typ): 10 ns
  • JESD-30 Code: R-PSFM-T3
  • Package / Case: TO-247-3
  • Power Dissipation: 90W
  • Rise Time: 9ns
  • Current - Continuous Drain (Id) @ 25°C: 10A Tc
  • Power Dissipation-Max: 90W Tc
  • Series: MDmesh?
  • Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V
  • Base Part Number: STW12N
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • ECCN Code: EAR99
  • Lead Free: Lead Free
  • Packaging: Tube
  • Pin Count: 3
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Continuous Drain Current (ID): 10A
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Pulsed Drain Current-Max (IDM): 40A
  • Subcategory: FET General Purpose Power
  • Turn On Delay Time: 15 ns
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Turn-Off Delay Time: 60 ns
  • Vgs (Max): ±25V
  • Resistance: 410mOhm
  • Avalanche Energy Rating (Eas): 200 mJ
  • JESD-609 Code: e3/e1
  • Terminal Finish: MATTE TIN/TIN SILVER COPPER
  • Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 50V
  • Rds On (Max) @ Id, Vgs: 410m Ω @ 5A, 10V

STMicroelectronics — Manufacturer Introduction

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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