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  • Manufacturer No:
    STW20NM65N
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    STW20NM65N
  • SKU:
    4555160
  • Description:
    MOSFET N-CH 650V 19A TO-247

STW20NM65N Details

MOSFET N-CH 650V 19A TO-247

STW20NM65N Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Packaging: Tube
  • Pin Count: 3
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Rise Time: 10ns
  • Drain to Source Breakdown Voltage: 650V
  • JESD-30 Code: R-PSFM-T3
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Continuous Drain Current (ID): 19A
  • Turn-Off Delay Time: 80 ns
  • Pulsed Drain Current-Max (IDM): 76A
  • Series: MDmesh? II
  • Avalanche Energy Rating (Eas): 500 mJ
  • Power Dissipation-Max: 160W Tc
  • JESD-609 Code: e3/e1
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 50V
  • Base Part Number: STW20N
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Pbfree Code: yes
  • Part Status: Obsolete
  • Number of Terminations: 3
  • Gate to Source Voltage (Vgs): 25V
  • Transistor Element Material: SILICON
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: FET General Purpose Power
  • Turn On Delay Time: 25 ns
  • Fall Time (Typ): 20 ns
  • Package / Case: TO-247-3
  • Additional Feature: AVALANCHE RATED
  • Vgs (Max): ±25V
  • Power Dissipation: 160W
  • Drain-source On Resistance-Max: 0.19Ohm
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Current - Continuous Drain (Id) @ 25°C: 19A Tc
  • Terminal Finish: MATTE TIN/TIN SILVER COPPER
  • Rds On (Max) @ Id, Vgs: 190m Ω @ 9.5A, 10V

STMicroelectronics — Manufacturer Introduction

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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