Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:0
- Qty Unit Price price
- 1 $0.72 $0.72
- 10 $0.712 $7.12
- 100 $0.704 $70.4
- 1000 $0.697 $697
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：BD237
- Manufacturer：STMicroelectronics
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：BD237
- SKU：4556447
- Description：Bipolar (Bjt) Single Transistor, Npn, 80 V, 3 Mhz, 25 W, 2 A, 40 Rohs Compliant: Yes
User Guide
User Guide
BD237 Details
Bipolar (Bjt) Single Transistor, Npn, 80 V, 3 Mhz, 25 W, 2 A, 40 Rohs Compliant: Yes
BD237 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Contact Plating: Tin
- Factory Lead Time: 8 Weeks
- Number of Terminations: 3
- Pin Count: 3
- Voltage - Rated DC: 100V
- Transistor Element Material: SILICON
- Current Rating: 2A
- Case Connection: ISOLATED
- Power Dissipation: 25W
- Transistor Type: NPN
- Collector Emitter Voltage (VCEO): 80V
- Collector Base Voltage (VCBO): 80V
- Subcategory: Other Transistors
- Lifecycle Status: ACTIVE (Last Updated: 7 months ago)
- Transition Frequency: 3MHz
- Length: 7.8mm
- Collector Emitter Saturation Voltage: 600mV
- Current - Collector Cutoff (Max): 100μA ICBO
- VCEsat-Max: 0.6 V
- Base Part Number: BD237
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Emitter Base Voltage (VEBO): 5V
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- hFE Min: 40
- Element Configuration: Single
- Max Collector Current: 2A
- Max Power Dissipation: 25W
- Transistor Application: SWITCHING
- Polarity/Channel Type: NPN
- Collector Emitter Breakdown Voltage: 80V
- Operating Temperature: 150°C TJ
- Height: 10.8mm
- Gain Bandwidth Product: 3MHz
- Frequency: 3MHz
- Width: 2.7mm
- Package / Case: TO-225AA, TO-126-3
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A 2V
Search for similar products
BD237 Similar Products
The four parts on the right have similar specifications to STMicroelectronics & BD237
STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
