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  • Manufacturer No:
    STGW35HF60WD
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - IGBTs - Single
  • Datasheet:
    STGW35HF60WD
  • SKU:
    4557938
  • Description:
    Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube

STGW35HF60WD Details

Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube

STGW35HF60WD Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Packaging: Tube
  • Number of Pins: 3
  • Collector Emitter Saturation Voltage: 2.5V
  • Transistor Element Material: SILICON
  • Input Type: Standard
  • Collector Emitter Voltage (VCEO): 600V
  • Operating Temperature: -55°C~150°C TJ
  • Power - Max: 200W
  • Reverse Recovery Time: 50 ns
  • Current - Collector Pulsed (Icm): 150A
  • Package / Case: TO-247-3
  • Transistor Application: POWER CONTROL
  • Length: 15.75mm
  • Additional Feature: LOW CONDUCTION LOSS
  • Width: 5.15mm
  • Lifecycle Status: NRND (Last Updated: 8 months ago)
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Test Condition: 400V, 20A, 10 Ω, 15V
  • Base Part Number: STGW35
  • Switching Energy: 290μJ (on), 185μJ (off)
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Part Status: Obsolete
  • Number of Terminations: 3
  • Pin Count: 3
  • Terminal Finish: Matte Tin (Sn)
  • Element Configuration: Single
  • Collector Emitter Breakdown Voltage: 600V
  • Gate-Emitter Voltage-Max: 20V
  • Max Power Dissipation: 200W
  • Polarity/Channel Type: N-CHANNEL
  • Max Collector Current: 60A
  • Turn On Delay Time: 30 ns
  • Turn On Time: 45 ns
  • Subcategory: Insulated Gate BIP Transistors
  • Turn-Off Delay Time: 175 ns
  • Gate-Emitter Thr Voltage-Max: 5.75V
  • Weight: 6.500007g
  • Turn Off Time-Nom (toff): 295 ns
  • Gate Charge: 140nC
  • Height: 24.45mm
  • Td (on/off) @ 25°C: 30ns/175ns

STMicroelectronics — Manufacturer Introduction

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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