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- Manufacturer No：STW26NM60N
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STW26NM60N
- SKU：4559152
- Description：MOSFET N-CH 600V 20A TO-247
User Guide
User Guide
STW26NM60N Details
MOSFET N-CH 600V 20A TO-247
STW26NM60N Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Terminations: 3
- Pin Count: 3
- Factory Lead Time: 16 Weeks
- Gate to Source Voltage (Vgs): 25V
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 600V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Temperature: 150°C TJ
- Fall Time (Typ): 50 ns
- Rise Time: 25 ns
- Vgs (Max): ±30V
- Turn On Delay Time: 13 ns
- Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
- Power Dissipation: 140W
- Width: 5.15mm
- Power Dissipation-Max: 140W Tc
- Height: 20.15mm
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
- Base Part Number: STW26N
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- Threshold Voltage: 3V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Continuous Drain Current (ID): 20A
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Subcategory: FET General Purpose Power
- Pulsed Drain Current-Max (IDM): 80A
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Package / Case: TO-247-3
- Length: 15.75mm
- Turn-Off Delay Time: 85 ns
- Current - Continuous Drain (Id) @ 25°C: 20A Tc
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Series: MDmesh? II
- Resistance: 165mOhm
- Rds On (Max) @ Id, Vgs: 165m Ω @ 10A, 10V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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