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- Manufacturer No：STP20NM65N
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STP20NM65N
- SKU：4559672
- Description：Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220 Tube
User Guide
User Guide
STP20NM65N Details
Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220 Tube
STP20NM65N Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- Terminal Finish: Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Temperature: 150°C TJ
- Subcategory: FET General Purpose Power
- JEDEC-95 Code: TO-220AB
- Pulsed Drain Current-Max (IDM): 60A
- Fall Time (Typ): 20 ns
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Turn-Off Delay Time: 75 ns
- Height: 15.75mm
- Vgs (Max): ±25V
- Power Dissipation-Max: 125W Tc
- Series: MDmesh? II
- Base Part Number: STP20N
- Rds On (Max) @ Id, Vgs: 270m Ω @ 7.5A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Pbfree Code: yes
- JESD-609 Code: e3
- Part Status: Obsolete
- Number of Terminations: 3
- Pin Count: 3
- Gate to Source Voltage (Vgs): 25V
- Transistor Element Material: SILICON
- Continuous Drain Current (ID): 15A
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Package / Case: TO-220-3
- Drain to Source Breakdown Voltage: 650V
- Rise Time: 10 ns
- Turn On Delay Time: 15 ns
- Width: 4.6mm
- Length: 10.4mm
- Additional Feature: AVALANCHE RATED
- Resistance: 270mOhm
- Power Dissipation: 160W
- Current - Continuous Drain (Id) @ 25°C: 15A Tc
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 50V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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