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- Manufacturer No：BU808DFI
- Manufacturer：STMicroelectronics
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：BU808DFI
- SKU：4560514
- Description：TRANS NPN DARL 700V ISOWATT218
User Guide
User Guide
BU808DFI Details
TRANS NPN DARL 700V ISOWATT218
BU808DFI Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Part Status: Obsolete
- Packaging: Tube
- Number of Pins: 3
- Transistor Element Material: SILICON
- Case Connection: ISOLATED
- Max Collector Current: 8A
- Transistor Application: SWITCHING
- Operating Temperature: 150°C TJ
- Collector Emitter Breakdown Voltage: 700V
- Subcategory: Other Transistors
- HTS Code: 8541.29.00.95
- Transistor Type: NPN - Darlington
- Power Dissipation: 52W
- JEDEC-95 Code: TO-218
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500mA, 5A
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Lead Free: Lead Free
- Emitter Base Voltage (VEBO): 5V
- Number of Terminations: 3
- Pin Count: 3
- Element Configuration: Single
- Current Rating: 8A
- Continuous Collector Current: 8A
- Polarity: NPN
- Voltage - Rated DC: 700V
- Collector Emitter Voltage (VCEO): 700V
- Current - Collector Cutoff (Max): 400μA
- Collector Base Voltage (VCBO): 1.4kV
- VCEsat-Max: 1.6 V
- Max Power Dissipation: 52W
- Package / Case: ISOWATT-218-3
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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