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- Manufacturer No：STGWT40H65DFB
- Manufacturer：STMicroelectronics
- Category：Transistors - IGBTs - Single
- Datasheet：STGWT40H65DFB
- SKU：4561228
- Description：IGBT 650V 80A 283W TO3P-3L
User Guide
User Guide
STGWT40H65DFB Details
IGBT 650V 80A 283W TO3P-3L
STGWT40H65DFB Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Radiation Hardening: No
- Packaging: Tube
- Element Configuration: Single
- Input Type: Standard
- Operating Temperature: -55°C~175°C TJ
- Collector Emitter Saturation Voltage: 1.6V
- Collector Emitter Voltage (VCEO): 650V
- Max Collector Current: 80A
- Lifecycle Status: ACTIVE (Last Updated: 7 months ago)
- IGBT Type: Trench Field Stop
- Package / Case: TO-3P-3, SC-65-3
- Reverse Recovery Time: 62 ns
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: 283W
- Test Condition: 400V, 40A, 5 Ω, 15V
- Switching Energy: 498μJ (on), 363μJ (off)
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- ECCN Code: EAR99
- Lead Free: Lead Free
- Number of Pins: 3
- Width: 5mm
- Gate-Emitter Voltage-Max: 20V
- Factory Lead Time: 32 Weeks
- Collector Emitter Breakdown Voltage: 650V
- Polarity/Channel Type: N-CHANNEL
- Length: 15.8mm
- Subcategory: Insulated Gate BIP Transistors
- Current - Collector Pulsed (Icm): 160A
- Height: 20.1mm
- Weight: 6.756003g
- Max Power Dissipation: 283W
- Gate Charge: 210nC
- Td (on/off) @ 25°C: 40ns/142ns
- Base Part Number: STGWT40
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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