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- Manufacturer No：STL8DN10LF3
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：STL8DN10LF3
- SKU：4562696
- Description：MOSFET 2N-CH 100V 20A 5X6
User Guide
User Guide
STL8DN10LF3 Details
MOSFET 2N-CH 100V 20A 5X6
STL8DN10LF3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- ECCN Code: EAR99
- Lead Free: Lead Free
- Factory Lead Time: 12 Weeks
- Drain to Source Voltage (Vdss): 100V
- Element Configuration: Dual
- Gate to Source Voltage (Vgs): 20V
- Packaging: Cut Tape (CT)
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Additional Feature: AVALANCHE RATED
- FET Feature: Logic Level Gate
- JESD-30 Code: R-PDSO-F6
- Power Dissipation: 70W
- Subcategory: FET General Purpose Powers
- Fall Time (Typ): 5.2 ns
- Pulsed Drain Current-Max (IDM): 31.2A
- Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V
- Base Part Number: STL8
- Series: Automotive, AEC-Q101, STripFET? III
- Turn-Off Delay Time: 50.6 ns
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- Radiation Hardening: No
- Number of Pins: 8
- Number of Terminations: 6
- Drain to Source Breakdown Voltage: 100V
- Transistor Element Material: SILICON
- Continuous Drain Current (ID): 20A
- Terminal Form: FLAT
- Operating Temperature: -55°C~175°C TJ
- Case Connection: DRAIN
- Lifecycle Status: ACTIVE (Last Updated: 7 months ago)
- Vgs(th) (Max) @ Id: 3V @ 250μA
- FET Type: 2 N-Channel (Dual)
- Max Power Dissipation: 70W
- Package / Case: 8-PowerVDFN
- Drain-source On Resistance-Max: 0.05Ohm
- Turn On Delay Time: 8.7 ns
- Avalanche Energy Rating (Eas): 190 mJ
- Rise Time: 9.6ns
- Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 25V
- Rds On (Max) @ Id, Vgs: 35m Ω @ 4A, 10V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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