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- Manufacturer No：STB4NK60Z-1
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STB4NK60Z-1
- SKU：4562801
- Description：MOSFET N-CH 600V 4A I2PAK
User Guide
User Guide
STB4NK60Z-1 Details
MOSFET N-CH 600V 4A I2PAK
STB4NK60Z-1 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Packaging: Tube
- Number of Pins: 3
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 30V
- Drain Current-Max (Abs) (ID): 4A
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Terminal Finish: Matte Tin (Sn) - annealed
- Operating Temperature: 150°C TJ
- Drain-source On Resistance-Max: 2Ohm
- Turn On Delay Time: 12 ns
- Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
- Turn-Off Delay Time: 29 ns
- Current - Continuous Drain (Id) @ 25°C: 4A Tc
- Series: SuperMESH?
- Power Dissipation-Max: 70W Tc
- Rise Time: 9.5ns
- Rds On (Max) @ Id, Vgs: 2 Ω @ 2A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Terminations: 3
- Pin Count: 3
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 600V
- Part Status: Not For New Designs
- Continuous Drain Current (ID): 4A
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM): 16A
- Subcategory: FET General Purpose Power
- Vgs (Max): ±30V
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
- Power Dissipation: 70W
- Fall Time (Typ): 16.5 ns
- Vgs(th) (Max) @ Id: 4.5V @ 50μA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Avalanche Energy Rating (Eas): 120 mJ
- Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
- Base Part Number: STB4N
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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