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- Manufacturer No：STP80N70F6
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STP80N70F6
- SKU：4562889
- Description：MOSFET N-Ch 68V 0.0063Ohm 96A STripFET VI
User Guide
User Guide
STP80N70F6 Details
MOSFET N-Ch 68V 0.0063Ohm 96A STripFET VI
STP80N70F6 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Lead Free: Lead Free
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Factory Lead Time: 42 Weeks
- Fall Time (Typ): 23 ns
- Subcategory: FET General Purpose Powers
- Continuous Drain Current (ID): 96A
- Turn-Off Delay Time: 102 ns
- Current - Continuous Drain (Id) @ 25°C: 96A Tc
- Base Part Number: STP80N
- Rds On (Max) @ Id, Vgs: 8m Ω @ 48A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Packaging: Tube
- Configuration: Single
- FET Type: N-Channel
- Operating Temperature: -55°C~175°C TJ
- Package / Case: TO-220-3
- Drain to Source Breakdown Voltage: 68V
- Turn On Delay Time: 23 ns
- Power Dissipation: 110W
- Power Dissipation-Max: 110W Tc
- Rise Time: 29ns
- Series: DeepGATE?, STripFET? VI
- Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5850pF @ 25V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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