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- Manufacturer No：STW15NM60N
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STW15NM60N
- SKU：4564104
- Description：MOSFET N-CH 600V 14A TO-247
User Guide
User Guide
STW15NM60N Details
MOSFET N-CH 600V 14A TO-247
STW15NM60N Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- JESD-609 Code: e3
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Pin Count: 3
- Reach Compliance Code: not_compliant
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 600V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Subcategory: FET General Purpose Power
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Package / Case: TO-247-3
- Turn-Off Delay Time: 80 ns
- Vgs (Max): ±25V
- Rise Time: 14ns
- Current - Continuous Drain (Id) @ 25°C: 14A Tc
- Avalanche Energy Rating (Eas): 300 mJ
- Drain-source On Resistance-Max: 0.299Ohm
- Rds On (Max) @ Id, Vgs: 299m Ω @ 7A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Qualification Status: Not Qualified
- Gate to Source Voltage (Vgs): 25V
- Terminal Finish: Tin (Sn)
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- JESD-30 Code: R-PSFM-T3
- Fall Time (Typ): 30 ns
- Continuous Drain Current (ID): 14A
- Power Dissipation: 125W
- Pulsed Drain Current-Max (IDM): 56A
- Power Dissipation-Max: 125W Tc
- Series: MDmesh? II
- Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 50V
- Base Part Number: STW15N
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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