Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:486
- Qty Unit Price price
- 1 $650.38 $650.38
- 10 $643.94 $6439.4
- 100 $637.564 $63756.4
- 1000 $631.251 $631251
- 10000 $625 $6250000
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：STB14NM50N
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STB14NM50N
- SKU：4564853
- Description：Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK T/R
User Guide
User Guide
STB14NM50N Details
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK T/R
STB14NM50N Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 3
- REACH SVHC: No SVHC
- Element Configuration: Dual
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Terminal Position: SINGLE
- Packaging: Cut Tape (CT)
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Terminal Finish: Matte Tin (Sn) - annealed
- Peak Reflow Temperature (Cel): 245
- JESD-30 Code: R-PSSO-G2
- Subcategory: FET General Purpose Power
- Height: 4.6mm
- Rise Time: 9 ns
- Fall Time (Typ): 32 ns
- Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
- Pulsed Drain Current-Max (IDM): 48A
- Current - Continuous Drain (Id) @ 25°C: 12A Tc
- Series: MDmesh? II
- Turn On Delay Time: 10.2 ns
- Length: 10.75mm
- Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 50V
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Pin Count: 4
- Terminal Form: GULL WING
- Threshold Voltage: 3V
- Gate to Source Voltage (Vgs): 25V
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 500V
- FET Type: N-Channel
- Continuous Drain Current (ID): 12A
- Operating Mode: ENHANCEMENT MODE
- Factory Lead Time: 26 Weeks
- Operating Temperature: 150°C TJ
- Case Connection: DRAIN
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Width: 10.4mm
- Power Dissipation: 90W
- Vgs (Max): ±25V
- Resistance: 320mOhm
- Turn-Off Delay Time: 42 ns
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Power Dissipation-Max: 90W Tc
- Vgs(th) (Max) @ Id: 4V @ 100μA
- Rds On (Max) @ Id, Vgs: 320m Ω @ 6A, 10V
- Base Part Number: STB14N
Search for similar products
STB14NM50N Similar Products
The four parts on the right have similar specifications to STMicroelectronics & STB14NM50N
STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
