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  • Manufacturer No:
    STP8N80K5
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    STP8N80K5
  • SKU:
    4565286
  • Description:
    MOSFET N CH 800V 6A TO220

STP8N80K5 Details

MOSFET N CH 800V 6A TO220

STP8N80K5 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Packaging: Tube
  • Number of Pins: 3
  • Terminal Finish: Tin (Sn)
  • Element Configuration: Single
  • Gate to Source Voltage (Vgs): 30V
  • Drain Current-Max (Abs) (ID): 6A
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Drain to Source Breakdown Voltage: 800V
  • Case Connection: DRAIN
  • JEDEC-95 Code: TO-220AB
  • Width: 4.6mm
  • Vgs (Max): ±30V
  • Length: 10.4mm
  • Height: 15.75mm
  • Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
  • Power Dissipation-Max: 110W Tc
  • Vgs(th) (Max) @ Id: 5V @ 100μA
  • Series: SuperMESH5?
  • Base Part Number: STP8N
  • Rds On (Max) @ Id, Vgs: 950m Ω @ 3A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Terminations: 3
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Transistor Element Material: SILICON
  • Factory Lead Time: 17 Weeks
  • Operating Temperature: -55°C~150°C TJ
  • Continuous Drain Current (ID): 6A
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Package / Case: TO-220-3
  • Subcategory: FET General Purpose Power
  • Fall Time (Typ): 20 ns
  • Pulsed Drain Current-Max (IDM): 24A
  • Turn On Delay Time: 12 ns
  • Rise Time: 14 ns
  • Turn-Off Delay Time: 32 ns
  • Power Dissipation: 110W
  • Current - Continuous Drain (Id) @ 25°C: 6A Tc
  • Resistance: 950mOhm
  • Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 100V

STMicroelectronics — Manufacturer Introduction

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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