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  • Manufacturer No:
    IRFP250
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFP250
  • SKU:
    4567056
  • Description:
    MOSFET N-CH 200V 33A TO-247

IRFP250 Details

MOSFET N-CH 200V 33A TO-247

IRFP250 Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • ECCN Code: EAR99
  • RoHS Status: Non-RoHS Compliant
  • Part Status: Obsolete
  • Number of Terminations: 3
  • JESD-609 Code: e0
  • Drain to Source Breakdown Voltage: 200V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Subcategory: FET General Purpose Power
  • JESD-30 Code: R-PSFM-T3
  • Package / Case: TO-247-3
  • Rise Time: 50ns
  • Current Rating: 33A
  • Pulsed Drain Current-Max (IDM): 132A
  • Current - Continuous Drain (Id) @ 25°C: 33A Tc
  • Avalanche Energy Rating (Eas): 600 mJ
  • Series: PowerMESH? II
  • Rds On (Max) @ Id, Vgs: 85m Ω @ 16A, 10V
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Packaging: Tube
  • Pin Count: 3
  • Voltage - Rated DC: 200V
  • Terminal Finish: Tin/Lead (Sn/Pb)
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Operating Temperature: 150°C TJ
  • Turn On Delay Time: 25 ns
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Fall Time (Typ): 40 ns
  • Continuous Drain Current (ID): 33A
  • Power Dissipation: 180W
  • Drain-source On Resistance-Max: 0.085Ohm
  • Power Dissipation-Max: 180W Tc
  • Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 25V
  • Base Part Number: IRFP

STMicroelectronics — Manufacturer Introduction

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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