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- Manufacturer No：STP33N60M2
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STP33N60M2
- SKU：4567315
- Description：Trans MOSFET N-CH 650V 26A 3-Pin(3+Tab) TO-220 Tube
User Guide
User Guide
STP33N60M2 Details
Trans MOSFET N-CH 650V 26A 3-Pin(3+Tab) TO-220 Tube
STP33N60M2 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Lead Free: Lead Free
- Packaging: Tube
- Gate to Source Voltage (Vgs): 25V
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Turn On Delay Time: 16 ns
- Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
- Power Dissipation: 190W
- Power Dissipation-Max: 190W Tc
- Series: MDmesh? II Plus
- Rise Time: 9.6ns
- Rds On (Max) @ Id, Vgs: 125m Ω @ 13A, 10V
- Base Part Number: STP33N
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Channels: 1
- Radiation Hardening: No
- Contact Plating: Tin
- Factory Lead Time: 16 Weeks
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Drain to Source Breakdown Voltage: 600V
- FET Type: N-Channel
- Package / Case: TO-220-3
- Fall Time (Typ): 9 ns
- Vgs (Max): ±25V
- Continuous Drain Current (ID): 26A
- Weight: 329.988449mg
- Current - Continuous Drain (Id) @ 25°C: 26A Tc
- Turn-Off Delay Time: 109 ns
- Gate Charge (Qg) (Max) @ Vgs: 45.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1781pF @ 100V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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