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Inventory:34624
  • Qty Unit Price price
  • 1 $178.987 $178.987
  • 10 $177.214 $1772.14
  • 100 $175.459 $17545.9
  • 1000 $173.721 $173721
  • 10000 $172 $1720000

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  • Manufacturer No:
    STN1HNK60
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    STN1HNK60
  • SKU:
    4567769
  • Description:
    MOSFET N-CH 600V 400MA SOT223

STN1HNK60 Details

MOSFET N-CH 600V 400MA SOT223

STN1HNK60 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Terminal Position: DUAL
  • Pin Count: 4
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Time@Peak Reflow Temperature-Max (s): 30
  • Max Junction Temperature (Tj): 150°C
  • Transistor Element Material: SILICON
  • Voltage - Rated DC: 600V
  • Gate to Source Voltage (Vgs): 30V
  • Continuous Drain Current (ID): 500mA
  • Technology: MOSFET (Metal Oxide)
  • Width: 3.5mm
  • Terminal Finish: Matte Tin (Sn) - annealed
  • Current Rating: 400mA
  • Subcategory: FET General Purpose Power
  • JESD-30 Code: R-PDSO-G4
  • Rise Time: 5 ns
  • Turn On Delay Time: 6.5 ns
  • Nominal Vgs: 3 V
  • Turn-Off Delay Time: 19 ns
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Series: SuperMESH?
  • Avalanche Energy Rating (Eas): 25 mJ
  • Power Dissipation-Max: 3.3W Tc
  • Rds On (Max) @ Id, Vgs: 8.5 Ω @ 500mA, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Terminations: 4
  • Factory Lead Time: 8 Weeks
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Threshold Voltage: 3V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Drain to Source Breakdown Voltage: 600V
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Length: 6.5mm
  • Case Connection: DRAIN
  • Fall Time (Typ): 25 ns
  • Vgs (Max): ±30V
  • Package / Case: TO-261-4, TO-261AA
  • Drain Current-Max (Abs) (ID): 0.4A
  • Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
  • Power Dissipation: 3.3W
  • Resistance: 8.5Ohm
  • Vgs(th) (Max) @ Id: 3.7V @ 250μA
  • Height: 1.82mm
  • Current - Continuous Drain (Id) @ 25°C: 400mA Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 156pF @ 25V

STMicroelectronics — Manufacturer Introduction

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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