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- Manufacturer No：BU508A
- Manufacturer：STMicroelectronics
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：BU508A
- SKU：4567893
- Description：Tube Through Hole NPN Single Bipolar (BJT) Transistor 1V @ 2A 4.5A 1mA 125W 7MHz
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User Guide
BU508A Details
Tube Through Hole NPN Single Bipolar (BJT) Transistor 1V @ 2A 4.5A 1mA 125W 7MHz
BU508A Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Contact Plating: Tin
- Packaging: Tube
- Number of Pins: 3
- DC Current Gain-Min (hFE): 6
- Emitter Base Voltage (VEBO): 10V
- Element Configuration: Single
- Max Collector Current: 8A
- Transistor Application: SWITCHING
- Polarity/Channel Type: NPN
- Voltage - Rated DC: 700V
- Collector Emitter Voltage (VCEO): 700V
- Package / Case: TO-247-3
- Max Power Dissipation: 125W
- Frequency: 7MHz
- VCEsat-Max: 1 V
- Base Part Number: BU508
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Lead Free: Lead Free
- Part Status: Obsolete
- Number of Terminations: 3
- Pin Count: 3
- JESD-609 Code: e0
- Transistor Element Material: SILICON
- Current Rating: 8A
- Current - Collector Cutoff (Max): 1mA
- Transistor Type: NPN
- Operating Temperature: 150°C TJ
- Collector Emitter Breakdown Voltage: 700V
- Subcategory: Other Transistors
- Power Dissipation: 125W
- Gain Bandwidth Product: 7MHz
- Transition Frequency: 7MHz
- Vce Saturation (Max) @ Ib, Ic: 1V @ 2A, 4.5A
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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