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- Manufacturer No：BD910
- Manufacturer：STMicroelectronics
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：BD910
- SKU：4569112
- Description：Bipolar Transistors - BJT PNP General Purpose
User Guide
User Guide
BD910 Details
Bipolar Transistors - BJT PNP General Purpose
BD910 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Emitter Base Voltage (VEBO): 5V
- Number of Terminations: 3
- Pin Count: 3
- Terminal Finish: Matte Tin (Sn)
- Transistor Element Material: SILICON
- Max Collector Current: 15A
- Current - Collector Cutoff (Max): 1mA
- Collector Emitter Voltage (VCEO): 80V
- Collector Base Voltage (VCBO): 80V
- Polarity/Channel Type: PNP
- Package / Case: TO-220-3
- JEDEC-95 Code: TO-220AB
- Transition Frequency: 3MHz
- VCEsat-Max: 3 V
- Power Dissipation: 90W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A 4V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Radiation Hardening: No
- Part Status: Obsolete
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- hFE Min: 40
- Element Configuration: Single
- Collector Emitter Saturation Voltage: 1V
- Transistor Application: SWITCHING
- Collector Emitter Breakdown Voltage: 80V
- Transistor Type: PNP
- Operating Temperature: 150°C TJ
- Subcategory: Other Transistors
- Gain Bandwidth Product: 3MHz
- Frequency: 3MHz
- Max Power Dissipation: 90W
- Vce Saturation (Max) @ Ib, Ic: 3V @ 2.5A, 10A
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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