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Inventory:3000
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  • Manufacturer No:
    BD912
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - Bipolar (BJT) - Single
  • Datasheet:
    BD912
  • SKU:
    4570485
  • Description:
    Trans GP BJT PNP 100V 15A 3-Pin(3+Tab) TO-220 Tube

BD912 Details

Trans GP BJT PNP 100V 15A 3-Pin(3+Tab) TO-220 Tube

BD912 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Factory Lead Time: 8 Weeks
  • Number of Terminations: 3
  • Pin Count: 3
  • Collector Emitter Breakdown Voltage: 100V
  • Collector Emitter Voltage (VCEO): 100V
  • Transistor Element Material: SILICON
  • hFE Min: 15
  • Current - Collector Cutoff (Max): 1mA
  • Transistor Type: PNP
  • Operating Temperature: 150°C TJ
  • Subcategory: Other Transistors
  • Width: 4.6mm
  • Transition Frequency: 3MHz
  • Length: 10.4mm
  • VCEsat-Max: 3 V
  • Power Dissipation: 90W
  • Voltage - Rated DC: -100V
  • Current Rating: -15A
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A 4V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Emitter Base Voltage (VEBO): 5V
  • Packaging: Tube
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Collector Base Voltage (VCBO): 100V
  • Collector Emitter Saturation Voltage: 3V
  • Element Configuration: Single
  • Max Collector Current: 15A
  • Transistor Application: SWITCHING
  • Polarity/Channel Type: PNP
  • Package / Case: TO-220-3
  • JEDEC-95 Code: TO-220AB
  • Gain Bandwidth Product: 3MHz
  • Frequency: 3MHz
  • Weight: 4.535924g
  • Max Power Dissipation: 90W
  • Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
  • Height: 9.15mm
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 2.5A, 10A

STMicroelectronics — Manufacturer Introduction

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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