Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:4280
- Qty Unit Price price
- 1 $0.548 $0.548
- 10 $0.542 $5.42
- 100 $0.536 $53.6
- 1000 $0.53 $530
- 10000 $0.524 $5240
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：2N3019
- Manufacturer：STMicroelectronics
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：2N3019
- SKU：4572610
- Description：Tube Through Hole NPN Single Bipolar (BJT) Transistor 100 @ 150mA 10V 10nA ICBO 800mW 100MHz
User Guide
User Guide
2N3019 Details
Tube Through Hole NPN Single Bipolar (BJT) Transistor 100 @ 150mA 10V 10nA ICBO 800mW 100MHz
2N3019 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Part Status: Obsolete
- Number of Terminations: 3
- Pin Count: 3
- Terminal Form: WIRE
- Current Rating: 1A
- Transistor Element Material: SILICON
- hFE Min: 100
- Frequency: 100MHz
- Gain Bandwidth Product: 100MHz
- Polarity/Channel Type: NPN
- Collector Emitter Breakdown Voltage: 80V
- Subcategory: Other Transistors
- Max Power Dissipation: 800mW
- Collector Emitter Saturation Voltage: 500mV
- Length: 9.4mm
- Diameter: 9.4mm
- Voltage - Rated DC: 140V
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Operating Temperature: 175°C TJ
- Current - Collector Cutoff (Max): 10nA ICBO
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- Terminal Finish: Matte Tin (Sn)
- Max Collector Current: 1A
- Element Configuration: Single
- Terminal Position: BOTTOM
- Transition Frequency: 100MHz
- Transistor Type: NPN
- Collector Emitter Voltage (VCEO): 80V
- Emitter Base Voltage (VEBO): 7V
- Height: 6.6mm
- Power Dissipation: 800mW
- Transistor Application: AMPLIFIER
- Width: 9.4mm
- Weight: 4.535924g
- Collector Base Voltage (VCBO): 140V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA 10V
- Base Part Number: 2N30
Search for similar products
2N3019 Similar Products
The four parts on the right have similar specifications to STMicroelectronics & 2N3019
STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
