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  • Manufacturer No:
    STB35NF10T4
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    STB35NF10T4
  • SKU:
    4574019
  • Description:
    MOSFET N-CH 100V 40A D2PAK

STB35NF10T4 Details

MOSFET N-CH 100V 40A D2PAK

STB35NF10T4 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Factory Lead Time: 12 Weeks
  • Pin Count: 3
  • Termination: SMD/SMT
  • Voltage - Rated DC: 100V
  • Dual Supply Voltage: 100V
  • Time@Peak Reflow Temperature-Max (s): 30
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Peak Reflow Temperature (Cel): 245
  • Continuous Drain Current (ID): 40A
  • Case Connection: DRAIN
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Height: 4.6mm
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Turn-Off Delay Time: 60 ns
  • Turn On Delay Time: 17 ns
  • Power Dissipation: 115W
  • Series: STripFET? II
  • Length: 10.75mm
  • Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V
  • Rds On (Max) @ Id, Vgs: 35m Ω @ 17.5A, 10V
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Pins: 3
  • Terminal Form: GULL WING
  • REACH SVHC: No SVHC
  • Drain to Source Breakdown Voltage: 100V
  • Terminal Finish: Matte Tin (Sn)
  • Threshold Voltage: 3V
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • Current Rating: 40A
  • JESD-30 Code: R-PSSO-G2
  • Subcategory: FET General Purpose Power
  • Fall Time (Typ): 15 ns
  • Lifecycle Status: ACTIVE (Last Updated: 7 months ago)
  • Width: 10.4mm
  • Rise Time: 60 ns
  • Nominal Vgs: 3 V
  • Current - Continuous Drain (Id) @ 25°C: 40A Tc
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Power Dissipation-Max: 115W Tc
  • Base Part Number: STB35N

STMicroelectronics — Manufacturer Introduction

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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